型号:

SI4453DY-T1-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET P-CH D-S 12V 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SI4453DY-T1-E3 PDF
标准包装 2,500
系列 TrenchFET®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 12V
电流 - 连续漏极(Id) @ 25° C 10A
开态Rds(最大)@ Id, Vgs @ 25° C 6.5 毫欧 @ 14A,4.5V
Id 时的 Vgs(th)(最大) 900mV @ 600µA
闸电荷(Qg) @ Vgs 165nC @ 5V
输入电容 (Ciss) @ Vds -
功率 - 最大 1.5W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
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